PART |
Description |
Maker |
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Toshiba Corporation
|
RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
MG400J1US51 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 硅N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba, Corp. Toshiba Semiconductor
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
MIG150Q201H |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
RJH60F4DPK RJH60F4DPK-00-T0 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
GT15Q10206 GT15Q102 |
Silicon N Channel IGBT High Power Switching Applications
|
http:// Toshiba Semiconductor
|
RJH60F4DPK11 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|